Similar Items: Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS
- Digital DLTS studies on radiation induced defects in Si, GaAs and GaN
- Investigation of electron-beam deposition and related damage in p-Si by means of Laplace and conventional deep-level transient spectroscopy
- Laplace deep-level transient spectroscopy studies of the divacancy in alpha-particle irradiated silicon
- Studies of interactions within silicon and germanium detectors
- TID Induced small signal model variation in CMOS and SiGe BiCMOS
- Electrical characterisation of plasma processing induced defects in silicon
Author: Auret, F.D. (Francois Danie)
- Ohmic contacts to cadmium telluride
- Schottky barrier diode fabrication on n-GaN for altraviolet detection
- Electrical characterization of process induced defects in germanium
- Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS
- Electrical and structural characterization of metal germanides
- Influence of particle irradiation on the electrical and defect properties of GaAs