Similar Items: Electrical and structural characterization of metal germanides
- Investigation of electron-beam deposition and related damage in p-Si by means of Laplace and conventional deep-level transient spectroscopy
- Electrical characterization of process, annealing and irradiation induced defects in ZnO
- Laplace deep-level transient spectroscopy studies of the divacancy in alpha-particle irradiated silicon
- Electrical characterization of ZnO and metal ZnO contacts
- Electrical characterisation of Schottky barrier diodes fabricated on GaAs by electron beam metallisation
- The effect of palladium deposition on electrically active defects in irradiated silicon
Author: Auret, F.D. (Francois Danie)
- Ohmic contacts to cadmium telluride
- Schottky barrier diode fabrication on n-GaN for altraviolet detection
- Electrical characterization of process induced defects in germanium
- Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS
- Electrical and structural characterization of metal germanides
- Influence of particle irradiation on the electrical and defect properties of GaAs