Similar Items: Influence of particle irradiation on the electrical and defect properties of GaAs
- Metastable defects in alpha-particle irradiated n-GaAs
- Digital DLTS studies on radiation induced defects in Si, GaAs and GaN
- Electrical characterisation of Schottky barrier diodes fabricated on GaAs by electron beam metallisation
- Electrical characterization of Al-doped GaN thin films deposited by electrodeposition
- Electrical characterisation of particle irradiated 4H-SiC
- Electrical characterization of process and irradiation induced defects in GaAs
Author: Auret, F.D. (Francois Danie)
- Ohmic contacts to cadmium telluride
- Schottky barrier diode fabrication on n-GaN for altraviolet detection
- Electrical characterization of process induced defects in germanium
- Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS
- Electrical and structural characterization of metal germanides
- Influence of particle irradiation on the electrical and defect properties of GaAs