Similar Items: Electrical characterization of process- and radiation-induced defects in 4H-SiC
- Electrical characterization of process-induced defects in 4H-SiC
- Electrical characterisation of particle irradiated 4H-SiC
- Effect of radiation damage on the migration behaviour of Europium implanted into both single crystalline 6H-SiC and polycrystalline SiC
- Diffusion of silver in 6H-SiC
- A Rutherford backscattering study on radiation damage and the diffusion of krypton implanted into 6H-SiC
- Diffusion of ion implanted iodine in 6H-SiC
Author: Meyer, W.E. (Walter Ernst)
- Electrical characterization of alpha-particle irradiation-induced defects in germanium
- Development and characterization of a tuneable AlGaN-based solar-blind UV-sensitive Schottky photodiode
- Electrical characterization of process- and radiation-induced defects in 4H-SiC
- Electrical characterization of ion-beam induced damage in GaN
- Laplace deep-level transient spectroscopy studies of the divacancy in alpha-particle irradiated silicon
- The development of a measuring technique for the UV-C distribution emitted from low pressure mercury lamps