Similar Items: Structural and electrical properties of annealed Ru thin films on SiC
- The interfacial reaction and analysis of W thin film on 6H-SiC annealed in vacuum, hydrogen and argon
- Solid-state interactions between Zr thin films and SiC
- Electrical characterisation of particle irradiated 4H-SiC
- Electrical characterization of process-induced defects in 4H-SiC
- Effect of swift heavy ion irradiation and annealing on the microstructure and migration behaviour of implanted Sr and Ag in SiC
- Electrical characterization of process- and radiation-induced defects in 4H-SiC
Author: Theron, C.C. (Chris)
- The solid state interaction of palladium with SiC
- Evaluation of velocity interferometry for high energetic materials using a VISAR
- Characterization of SANS Facility at Necsa and SANS Application to the Study of Wool Fibres
- Structural and electrical properties of annealed Ru thin films on SiC
- Solid-state interactions between Zr thin films and SiC
- Analysis of W^± bosons with ALICE: Effect of alignment on W^± bosons analysis