Similar Items: Migration behaviour of Europium implanted into single crystalline 6H-SiC
- Effect of radiation damage on the migration behaviour of Europium implanted into both single crystalline 6H-SiC and polycrystalline SiC
- Diffusion of ion implanted iodine in 6H-SiC
- Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC
- Diffusion of silver in 6H-SiC
- A Rutherford backscattering study on radiation damage and the diffusion of krypton implanted into 6H-SiC
- Effect of swift heavy ion irradiation and annealing on the microstructure and migration behaviour of implanted Sr and Ag in SiC
Author: Hlatshwayo, Thulani Thokozani
- Effect of helium and silver ions co-implanted into polycrystalline silicon carbide at 350 °C on structural evolution and migration behaviour of silver
- Effect of helium, strontium and silver implanted into silicon carbide on the structural changes and migration of the implants
- The effect of implantation and heat treatment on the structural evolution and migration behaviour of Selenium in glassy carbon
- Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC
- Effect of swift heavy ion irradiation on the migration behaviour of Xenon implanted in spark plasma sintered titanium nitride and titanium carbide.
- Effect of radiation damage on the migration behaviour of Europium implanted into both single crystalline 6H-SiC and polycrystalline SiC