Similar Items: Design of a stress-dependent deep-level transient spectroscopy instrument for the study of the structural properties of defects in semiconductors
- Electrical characterization of process induced defects in GaAs by Laplace deep level transient spectroscopy
- Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS
- Laplace deep-level transient spectroscopy studies of the divacancy in alpha-particle irradiated silicon
- Optical characterization of semiconductors using photo reflection spectroscopy
- Investigation of electron-beam deposition and related damage in p-Si by means of Laplace and conventional deep-level transient spectroscopy
- Transient absorption spectroscopy of metal complexes : dithizonatophenylmercury(II) and derivatives
Author: Meyer, W.E. (Walter Ernst)
- Electrical characterization of alpha-particle irradiation-induced defects in germanium
- Development and characterization of a tuneable AlGaN-based solar-blind UV-sensitive Schottky photodiode
- Electrical characterization of process- and radiation-induced defects in 4H-SiC
- Electrical characterization of ion-beam induced damage in GaN
- Laplace deep-level transient spectroscopy studies of the divacancy in alpha-particle irradiated silicon
- The development of a measuring technique for the UV-C distribution emitted from low pressure mercury lamps