Similar Items: Investigation of electron-beam deposition and related damage in p-Si by means of Laplace and conventional deep-level transient spectroscopy
- Laplace deep-level transient spectroscopy studies of the divacancy in alpha-particle irradiated silicon
- Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS
- Electrical characterization of process, annealing and irradiation induced defects in ZnO
- The effect of palladium deposition on electrically active defects in irradiated silicon
- Electrical and structural characterization of metal germanides
- Effects of irradiation-induced defects in germanium
Author: Meyer, W.E. (Walter Ernst)
- Electrical characterization of alpha-particle irradiation-induced defects in germanium
- Development and characterization of a tuneable AlGaN-based solar-blind UV-sensitive Schottky photodiode
- Electrical characterization of process- and radiation-induced defects in 4H-SiC
- Electrical characterization of ion-beam induced damage in GaN
- Laplace deep-level transient spectroscopy studies of the divacancy in alpha-particle irradiated silicon
- The development of a measuring technique for the UV-C distribution emitted from low pressure mercury lamps