Similar Items: Impact of Power Loss in the Substrate on the Efficiency of RF GaN-on-Si HEMTs
- Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
- Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/W
- Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs
- Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics
- Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights
- GaN‐Based Red Resonant Cavity Light‐Emitting Diode up to 673 nm