Similar Items: Electrical characterization of process, annealing and irradiation induced defects in ZnO
- Characterization of electrical properties and defects in Er- and Yb-doped ZnO thin films grown by sol-gel spin coating
- Investigation of electron-beam deposition and related damage in p-Si by means of Laplace and conventional deep-level transient spectroscopy
- Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS
- Electrical characterisation of Schottky barrier diodes fabricated on GaAs by electron beam metallisation
- Digital DLTS studies on radiation induced defects in Si, GaAs and GaN
- Electrical and structural characterization of metal germanides
Similar Items: Electrical characterization of process-induced defects in 4H-SiC
- Electrical characterization of process- and radiation-induced defects in 4H-SiC
- Electrical characterisation of particle irradiated 4H-SiC
- Diffusion of silver in 6H-SiC
- Effect of radiation damage on the migration behaviour of Europium implanted into both single crystalline 6H-SiC and polycrystalline SiC
- Diffusion of ion implanted iodine in 6H-SiC
- Structural and electrical properties of annealed Ru thin films on SiC