Auret, F. (2013). Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS. University of Pretoria.
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Chicago Style (17th ed.) Citation
Auret, F.D. Characterization of Process and Radiation Induced Defects in Si and Ge Using Conventional Deep Level Transient Spectroscopy (DLTS) and Laplace-DLTS. University of Pretoria, 2013.
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MLA (9th ed.) Citation
Auret, F.D. Characterization of Process and Radiation Induced Defects in Si and Ge Using Conventional Deep Level Transient Spectroscopy (DLTS) and Laplace-DLTS. University of Pretoria, 2013.
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Warning: These citations may not always be 100% accurate.