(2026). Breakdown Voltage Exceeding 2 kV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates. Electronics Letters.
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Chicago Style (17th ed.) Citation
"Breakdown Voltage Exceeding 2 KV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates."
Electronics Letters 2026.
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MLA (9th ed.) Citation
"Breakdown Voltage Exceeding 2 KV in Normally‐Off Planar AlGaN/GaN HEMTs on Si Substrates."
Electronics Letters, 2026.
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Warning: These citations may not always be 100% accurate.