(2026). Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 p-Gate Stack. IEEE Journal of the Electron Devices Society.
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Chicago Style (17th ed.) Citation
"Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 P-Gate Stack."
IEEE Journal of the Electron Devices Society 2026.
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MLA (9th ed.) Citation
"Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al2O3 P-Gate Stack."
IEEE Journal of the Electron Devices Society, 2026.
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Warning: These citations may not always be 100% accurate.