APA (7th ed.) Citation
(2024). Passivation of substrates with hydrogen to reduce the number of electron traps in the buffer layer at the contact of silicon with Ba1-xSrxTiO3. Modern Electronic Materials.
Chicago Style (17th ed.) Citation
"Passivation of Substrates with Hydrogen to Reduce the Number of Electron Traps in the Buffer Layer at the Contact of Silicon with Ba1-xSrxTiO3." Modern Electronic Materials 2024.
MLA (9th ed.) Citation
"Passivation of Substrates with Hydrogen to Reduce the Number of Electron Traps in the Buffer Layer at the Contact of Silicon with Ba1-xSrxTiO3." Modern Electronic Materials, 2024.
Warning: These citations may not always be 100% accurate.