(2026). A Monolithic SiC MOSFET Behavioural Model with Full‐Temperature‐Range Capability: SPICE‐Compatible Structure and Experimental Verification. IET Power Electronics.
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Chicago Style (17th ed.) Citation
"A Monolithic SiC MOSFET Behavioural Model with Full‐Temperature‐Range Capability: SPICE‐Compatible Structure and Experimental Verification."
IET Power Electronics 2026.
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MLA (9th ed.) Citation
"A Monolithic SiC MOSFET Behavioural Model with Full‐Temperature‐Range Capability: SPICE‐Compatible Structure and Experimental Verification."
IET Power Electronics, 2026.
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Warning: These citations may not always be 100% accurate.