(2025). Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights. IEEE Journal of the Electron Devices Society.
Successfully copied to clipboard
Copying to clipboard failed
Chicago Style (17th ed.) Citation
"Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights."
IEEE Journal of the Electron Devices Society 2025.
Successfully copied to clipboard
Copying to clipboard failed
MLA (9th ed.) Citation
"Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights."
IEEE Journal of the Electron Devices Society, 2025.
Successfully copied to clipboard
Copying to clipboard failed
Warning: These citations may not always be 100% accurate.