APA (7th ed.) Citation
(2026). Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks. IEEE Journal of the Electron Devices Society.
Chicago Style (17th ed.) Citation
"Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks." IEEE Journal of the Electron Devices Society 2026.
MLA (9th ed.) Citation
"Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks." IEEE Journal of the Electron Devices Society, 2026.
Warning: These citations may not always be 100% accurate.