(2026). Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation. IEEE Journal of the Electron Devices Society.
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Chicago Style (17th ed.) Citation
"Enhancing Ultraviolet Responsivity of GaN P-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation."
IEEE Journal of the Electron Devices Society 2026.
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MLA (9th ed.) Citation
"Enhancing Ultraviolet Responsivity of GaN P-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation."
IEEE Journal of the Electron Devices Society, 2026.
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Warning: These citations may not always be 100% accurate.