(2026). Comparative Analysis of Transient Characteristics of Gate Driver Topologies in Paralleled Silicon Carbide Power Modules. IET Power Electronics.
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Chicago Style (17th ed.) Citation
"Comparative Analysis of Transient Characteristics of Gate Driver Topologies in Paralleled Silicon Carbide Power Modules."
IET Power Electronics 2026.
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MLA (9th ed.) Citation
"Comparative Analysis of Transient Characteristics of Gate Driver Topologies in Paralleled Silicon Carbide Power Modules."
IET Power Electronics, 2026.
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Warning: These citations may not always be 100% accurate.