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Direct Extraction of Fowler–Nordheim Tunneling Parameters of Asymmetric Metal-Insulator-Metal Diodes Based on Current-Voltage Measurement
Published in IEEE Journal of the Electron Devices Society (2025)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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A Cryogenic Ultra-Thin Body SiGeSn Transistor
Published in IEEE Journal of the Electron Devices Society (2025)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing
Published in IEEE Journal of the Electron Devices Society (2025)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Investigation of PBTS-Induced Degradation Mechanisms in SA TG Coplanar IGZO TFTs Using Low-Frequency Noise Analysis
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Complementary Field Effect Transistor (CFET) for the 2-nm Technology Node: A Review From Device to Circuit Perspectives
Published in IEEE Journal of the Electron Devices Society (2025)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/W
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Sb-Doped Substrates for Low-Noise Silicon Photomultipliers
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Memory Window Enhancement With Germanium-Incorporated Charge Trap Layer in Flash Memory Device
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Research on 4H-SiC Photoconductive Semiconductor Switch Employing Composite Anti-Reflection Coating
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Evaluation of Interface Traps Within Drift Region in LDMOS Using a Multi-Pulse Test Method
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Memcapacitor-Based Insect Feeding Behaviour Classification With Reservoir Computing
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Power Spectral Density of Thermal Noise at High Frequencies in Thermal Conductance for Semiconductor Devices
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process
Published in IEEE Journal of the Electron Devices Society (2026)Subjects: “…Technology & Engineering — Aerospace & Applied Tech…”
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