Search Results - Aerospace Engineering

  1. Direct Extraction of Fowler–Nordheim Tunneling Parameters of Asymmetric Metal-Insulator-Metal Diodes Based on Current-Voltage Measurement

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  2. A Cryogenic Ultra-Thin Body SiGeSn Transistor

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  3. Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing

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  4. Investigation of PBTS-Induced Degradation Mechanisms in SA TG Coplanar IGZO TFTs Using Low-Frequency Noise Analysis

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  5. Repetitive Gate-HBM-ESD-Induced Vth Degradation for RF GaN HEMT With Matching Networks

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  6. Enhancing Ultraviolet Responsivity of GaN p-i-n Photodetectors Through Full Depletion Thin-Layer Doping-Induced Carrier Transport Modulation

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  7. Complementary Field Effect Transistor (CFET) for the 2-nm Technology Node: A Review From Device to Circuit Perspectives

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  8. Research on Degradation of P-FinFET Under Mixed NBTI and HCD Stress

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  9. Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics

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  10. Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/W

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  11. Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity

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  12. Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory

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  13. Sb-Doped Substrates for Low-Noise Silicon Photomultipliers

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  14. Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs

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  15. Memory Window Enhancement With Germanium-Incorporated Charge Trap Layer in Flash Memory Device

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  16. Research on 4H-SiC Photoconductive Semiconductor Switch Employing Composite Anti-Reflection Coating

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  17. Evaluation of Interface Traps Within Drift Region in LDMOS Using a Multi-Pulse Test Method

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  18. Memcapacitor-Based Insect Feeding Behaviour Classification With Reservoir Computing

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  19. Power Spectral Density of Thermal Noise at High Frequencies in Thermal Conductance for Semiconductor Devices

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  20. Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process

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