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Atomic mobility in thin solid Pa2Si films
Bibliography: pages 210-215.
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| Main Author: | |
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
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Department of Physics
2016
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| _version_ | 1867613772395315200 |
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| access_status_str | Open Access |
| author | Zingu, Edmund Charles |
| author2 | Comrie, Craig M |
| author_browse | Comrie, Craig M Zingu, Edmund Charles |
| author_facet | Comrie, Craig M Zingu, Edmund Charles |
| author_sort | Zingu, Edmund Charles |
| collection | Thesis |
| description | Bibliography: pages 210-215. |
| format | Thesis |
| id | oai:open.uct.ac.za:11427/17052 |
| institution | University of Cape Town (South Africa) |
| language | eng |
| last_indexed | 2026-06-10T12:41:27.700Z |
| license_str | Not specified — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UCTD — University of Cape Town Open Access Repository |
| publishDate | 2016 |
| publishDateRange | 2016 |
| publishDateSort | 2016 |
| publisher | Department of Physics |
| publisherStr | Department of Physics |
| record_format | dspace |
| source_str | UCTD — University of Cape Town Open Access Repository |
| spelling | oai:open.uct.ac.za:11427/17052 Atomic mobility in thin solid Pa2Si films Zingu, Edmund Charles Comrie, Craig M Physics Kinetics Bibliography: pages 210-215. A theory for the growth kinetics of planar silicide formation in single- and bi-layer metal silicon systems has been developed on the basis that the chemical potential gradient in the growing layer is the driving force for diffusion. The predictions of the theory, when applied to single layer metal-silicon systems, is in agreement with other theories and with experimental results. Planar growth of the outer silicide layer in bilayer metal-silicon systems is predicted to proceed linearly with time, both when controlled by an interfacial reaction and when limited by diffusion through the interposed silicide layer (when this layer is sufficiently thick). In the latter case it is predicted that the growth rate of the outer silicide layer is inversely proportional to the thickness of the interposed layer. 2016-02-15T07:17:29Z 2016-02-15T07:17:29Z 1985 Doctoral Thesis Doctoral PhD http://hdl.handle.net/11427/17052 eng application/pdf Department of Physics Faculty of Science University of Cape Town |
| spellingShingle | Physics Kinetics Zingu, Edmund Charles Atomic mobility in thin solid Pa2Si films |
| thesis_degree_str | Doctoral |
| title | Atomic mobility in thin solid Pa2Si films |
| title_full | Atomic mobility in thin solid Pa2Si films |
| title_fullStr | Atomic mobility in thin solid Pa2Si films |
| title_full_unstemmed | Atomic mobility in thin solid Pa2Si films |
| title_short | Atomic mobility in thin solid Pa2Si films |
| title_sort | atomic mobility in thin solid pa2si films |
| topic | Physics Kinetics |
| url | http://hdl.handle.net/11427/17052 |
| work_keys_str_mv | AT zinguedmundcharles atomicmobilityinthinsolidpa2sifilms |