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Broadband, low-noise and power microwave amplifiers
The design of Broadband, Low-Noise and Power Microwave Amplifiers using microstrip softboard technology is investigated. The software program TOUCHSTONE (TM) by EEsof is used extensively as a basic design tool. The characterisation of the GaAs Field Effect Transistors, used for the amplifiers, is ca...
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| Format: | Thesis |
| Language: | English |
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Department of Electrical Engineering
2016
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| _version_ | 1867611289649414144 |
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| access_status_str | Open Access |
| author | Hall, Andrew D |
| author2 | Downing, B J |
| author_browse | Downing, B J Hall, Andrew D |
| author_facet | Downing, B J Hall, Andrew D |
| author_sort | Hall, Andrew D |
| collection | Thesis |
| description | The design of Broadband, Low-Noise and Power Microwave Amplifiers using microstrip softboard technology is investigated. The software program TOUCHSTONE (TM) by EEsof is used extensively as a basic design tool. The characterisation of the GaAs Field Effect Transistors, used for the amplifiers, is carried out. These characterisations are then used by the program in its circuit analysis. A determination of the validity of using the manufacturer's data, for the designs, is determined by comparing it to the measured data. Source-Pull and Load-Pull measurements were performed for the Power GaAs FET characterisation. The noise-parameter device characterisation is carried out in a similar way to that for Load-Pull data. Each amplifier required final tuning adjustments in order to peak the performances. The Broadband Maximum Gain Amplifier had a 10 ± 1.5dB gain over a bandwidth from 2- to 6-GHz. The Low-Noise amplifier achieved 5dB Noise-Figure and 5.4 ± 1. 4dB gain over the 2- to 6-GHz band. The Power amplifier Output Power was 390mW over the 3.7- to 4.2-GHz band. Techniques of broadband matching are investigated, with Double-Stub matching producing the widest bandwidth. A literature survey is presented on aspects of broadband microwave amplifiers, as well as a survey on Computer-aided-design at microwave frequencies and techniques of Large-Signal Transistor characterisation. |
| format | Thesis |
| id | oai:open.uct.ac.za:11427/17613 |
| institution | University of Cape Town (South Africa) |
| language | eng |
| license_str | Not specified — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UCTD — University of Cape Town Open Access Repository |
| publishDate | 2016 |
| publishDateRange | 2016 |
| publishDateSort | 2016 |
| publisher | Department of Electrical Engineering |
| publisherStr | Department of Electrical Engineering |
| record_format | dspace |
| source_str | UCTD — University of Cape Town Open Access Repository |
| spelling | oai:open.uct.ac.za:11427/17613 Broadband, low-noise and power microwave amplifiers Hall, Andrew D Downing, B J Electrical and Electronic Engineering The design of Broadband, Low-Noise and Power Microwave Amplifiers using microstrip softboard technology is investigated. The software program TOUCHSTONE (TM) by EEsof is used extensively as a basic design tool. The characterisation of the GaAs Field Effect Transistors, used for the amplifiers, is carried out. These characterisations are then used by the program in its circuit analysis. A determination of the validity of using the manufacturer's data, for the designs, is determined by comparing it to the measured data. Source-Pull and Load-Pull measurements were performed for the Power GaAs FET characterisation. The noise-parameter device characterisation is carried out in a similar way to that for Load-Pull data. Each amplifier required final tuning adjustments in order to peak the performances. The Broadband Maximum Gain Amplifier had a 10 ± 1.5dB gain over a bandwidth from 2- to 6-GHz. The Low-Noise amplifier achieved 5dB Noise-Figure and 5.4 ± 1. 4dB gain over the 2- to 6-GHz band. The Power amplifier Output Power was 390mW over the 3.7- to 4.2-GHz band. Techniques of broadband matching are investigated, with Double-Stub matching producing the widest bandwidth. A literature survey is presented on aspects of broadband microwave amplifiers, as well as a survey on Computer-aided-design at microwave frequencies and techniques of Large-Signal Transistor characterisation. 2016-03-10T06:53:27Z 2016-03-10T06:53:27Z 1986 Master Thesis Masters MSc (Eng) http://hdl.handle.net/11427/17613 eng application/pdf Department of Electrical Engineering Faculty of Engineering and the Built Environment University of Cape Town |
| spellingShingle | Electrical and Electronic Engineering Hall, Andrew D Broadband, low-noise and power microwave amplifiers |
| thesis_degree_str | Master's |
| title | Broadband, low-noise and power microwave amplifiers |
| title_full | Broadband, low-noise and power microwave amplifiers |
| title_fullStr | Broadband, low-noise and power microwave amplifiers |
| title_full_unstemmed | Broadband, low-noise and power microwave amplifiers |
| title_short | Broadband, low-noise and power microwave amplifiers |
| title_sort | broadband low noise and power microwave amplifiers |
| topic | Electrical and Electronic Engineering |
| url | http://hdl.handle.net/11427/17613 |
| work_keys_str_mv | AT hallandrewd broadbandlownoiseandpowermicrowaveamplifiers |