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Controlling CoSi2 formation temperature by reactive deposition
Includes abstract.
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| Main Author: | |
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
Department of Physics
2014
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| _version_ | 1867613185216872448 |
|---|---|
| access_status_str | Open Access |
| author | Ahmed, Hind Ali Mohmmed |
| author2 | Comrie, Craig |
| author_browse | Ahmed, Hind Ali Mohmmed Comrie, Craig |
| author_facet | Comrie, Craig Ahmed, Hind Ali Mohmmed |
| author_sort | Ahmed, Hind Ali Mohmmed |
| collection | Thesis |
| description | Includes abstract. |
| format | Thesis |
| id | oai:open.uct.ac.za:11427/6523 |
| institution | University of Cape Town (South Africa) |
| language | eng |
| last_indexed | 2026-06-10T12:32:07.214Z |
| license_str | Not specified — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UCTD — University of Cape Town Open Access Repository |
| publishDate | 2014 |
| publishDateRange | 2014 |
| publishDateSort | 2014 |
| publisher | Department of Physics |
| publisherStr | Department of Physics |
| record_format | dspace |
| source_str | UCTD — University of Cape Town Open Access Repository |
| spelling | oai:open.uct.ac.za:11427/6523 Controlling CoSi2 formation temperature by reactive deposition Ahmed, Hind Ali Mohmmed Comrie, Craig Physics Includes abstract. Includes bibliographical references (leaves 70-77). When cobalt is evaporated under ultra high vacuum conditions onto a heated silicon substrate, the reaction between the cobalt and the silicon starts immediately and cobalt silicides are formed directly - a technique referred to as reactive deposition. This procedure was used to grow silicide films over a variety of temperatures ranging between 375 - 550 ce. It was found that a disilicide film is formed directly for substrate temperature maintained at T 2014-08-13T20:03:38Z 2014-08-13T20:03:38Z 2008 Master Thesis Masters MSc http://hdl.handle.net/11427/6523 eng application/pdf Department of Physics Faculty of Science University of Cape Town |
| spellingShingle | Physics Ahmed, Hind Ali Mohmmed Controlling CoSi2 formation temperature by reactive deposition |
| thesis_degree_str | Master's |
| title | Controlling CoSi2 formation temperature by reactive deposition |
| title_full | Controlling CoSi2 formation temperature by reactive deposition |
| title_fullStr | Controlling CoSi2 formation temperature by reactive deposition |
| title_full_unstemmed | Controlling CoSi2 formation temperature by reactive deposition |
| title_short | Controlling CoSi2 formation temperature by reactive deposition |
| title_sort | controlling cosi2 formation temperature by reactive deposition |
| topic | Physics |
| url | http://hdl.handle.net/11427/6523 |
| work_keys_str_mv | AT ahmedhindalimohmmed controllingcosi2formationtemperaturebyreactivedeposition |