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Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates
Includes bibliography.
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| Main Author: | |
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| Other Authors: | |
| Format: | Thesis |
| Language: | English |
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Department of Physics
2014
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| _version_ | 1867613195792809984 |
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| access_status_str | Open Access |
| author | Minani, Evariste |
| author2 | Härting, Margit |
| author_browse | Härting, Margit Minani, Evariste |
| author_facet | Härting, Margit Minani, Evariste |
| author_sort | Minani, Evariste |
| collection | Thesis |
| description | Includes bibliography. |
| format | Thesis |
| id | oai:open.uct.ac.za:11427/6995 |
| institution | University of Cape Town (South Africa) |
| language | eng |
| last_indexed | 2026-06-10T12:32:17.361Z |
| license_str | Not specified — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UCTD — University of Cape Town Open Access Repository |
| publishDate | 2014 |
| publishDateRange | 2014 |
| publishDateSort | 2014 |
| publisher | Department of Physics |
| publisherStr | Department of Physics |
| record_format | dspace |
| source_str | UCTD — University of Cape Town Open Access Repository |
| spelling | oai:open.uct.ac.za:11427/6995 Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates Minani, Evariste Härting, Margit Britton, David T Physics Includes bibliography. Hydrogenated amorphous silicon (a-Si:H) is an important thin film semiconductor with a wide variety of applications in microelectronics and optoelectronics. However, it is metastable and photodegrades after a moderate light illumination (Staebler-Wronski effect). The most stable material has been suggested to be at the edge of crystallinity with microcrystalline inclusions. Using a combination of positron annihilation and X-ray diffraction techniques, the microstructure of hydrogenated amorphous silicon grown by hot wire chemical vapour deposition on glass substrates at different substrate temperatures ranging between 300°C and 500 °C is examined. In previous studies the crystallisation was accompanied by a relaxation of defect structure with an increase in free volume at positron annihilation site. In this work, both techniques show a relaxation of the network with increasing growth temperature, leading to a higher degree of ordering, shorter bond lengths, and a reduction in the average size of defects in the material. 2014-09-08T14:27:37Z 2014-09-08T14:27:37Z 2002 Master Thesis Masters MSc http://hdl.handle.net/11427/6995 eng application/pdf Department of Physics Faculty of Science University of Cape Town |
| spellingShingle | Physics Minani, Evariste Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates |
| thesis_degree_str | Master's |
| title | Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates |
| title_full | Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates |
| title_fullStr | Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates |
| title_full_unstemmed | Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates |
| title_short | Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates |
| title_sort | growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates |
| topic | Physics |
| url | http://hdl.handle.net/11427/6995 |
| work_keys_str_mv | AT minanievariste growthtemperatureandmicrostructuraldifferencesinhydrogenatedamorphoussilicondepositedonglasssubstrates |