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Surface roughness of InP after N+2 bombardment : Ion areic dose dependence
Dissertation (MSc (Physics))--University of Pretoria, 2006.
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| Format: | Thesis |
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University of Pretoria
2013
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| _version_ | 1867613480000946176 |
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| access_status_str | Open Access |
| author2 | Malherbe, Johan B. |
| author_browse | Malherbe, Johan B. |
| author_facet | Malherbe, Johan B. |
| collection | Thesis |
| dc_rights_str_mv | © 2004, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. |
| description | Dissertation (MSc (Physics))--University of Pretoria, 2006. |
| format | Thesis |
| id | oai:repository.up.ac.za:2263/24608 |
| institution | University of Pretoria (South Africa) |
| last_indexed | 2026-06-10T12:36:48.836Z |
| license_str | Other — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository |
| publishDate | 2013 |
| publishDateRange | 2013 |
| publishDateSort | 2013 |
| publisher | University of Pretoria |
| publisherStr | University of Pretoria |
| record_format | dspace |
| source_str | UPSpace — University of Pretoria Institutional Repository |
| spelling | oai:repository.up.ac.za:2263/24608 Surface roughness of InP after N+2 bombardment : Ion areic dose dependence Malherbe, Johan B. upetd@up.ac.za Van den Berg, Noelani Osman, Sarah Omer Siddig Electronics materials Indium compounds Semiconducrtors Surface roughness Indium phosphide UCTD Dissertation (MSc (Physics))--University of Pretoria, 2006. Please read the abstract in the section front of this document. Physics unrestricted 2013-09-06T18:03:35Z 2005-05-20 2013-09-06T18:03:35Z 2004-09-01 2006-05-20 2005-05-13 Dissertation Osman, SOS 2004, Surface roughness of InP after N+2 bombardment: Ion areic dose dependence, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/24608 > H250/ag http://hdl.handle.net/2263/24608 http://upetd.up.ac.za/thesis/available/etd-05132005-105139/ © 2004, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria |
| spellingShingle | Electronics materials Indium compounds Semiconducrtors Surface roughness Indium phosphide UCTD Surface roughness of InP after N+2 bombardment : Ion areic dose dependence |
| title | Surface roughness of InP after N+2 bombardment : Ion areic dose dependence |
| title_full | Surface roughness of InP after N+2 bombardment : Ion areic dose dependence |
| title_fullStr | Surface roughness of InP after N+2 bombardment : Ion areic dose dependence |
| title_full_unstemmed | Surface roughness of InP after N+2 bombardment : Ion areic dose dependence |
| title_short | Surface roughness of InP after N+2 bombardment : Ion areic dose dependence |
| title_sort | surface roughness of inp after n 2 bombardment ion areic dose dependence |
| topic | Electronics materials Indium compounds Semiconducrtors Surface roughness Indium phosphide UCTD |
| url | http://hdl.handle.net/2263/24608 http://upetd.up.ac.za/thesis/available/etd-05132005-105139/ |