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An SRAM system based on a reduced-area four-transistor CMOS SRAM cell

Dissertation (MEng (Electronic Engineering))--University of Pretoria, 2002.

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Other Authors: Du Plessis, Monuko
Format: Thesis
Published: University of Pretoria 2013
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access_status_str Open Access
author2 Du Plessis, Monuko
author_browse Du Plessis, Monuko
author_facet Du Plessis, Monuko
collection Thesis
dc_rights_str_mv © 2002, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria.
description Dissertation (MEng (Electronic Engineering))--University of Pretoria, 2002.
format Thesis
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institution University of Pretoria (South Africa)
last_indexed 2026-06-10T12:39:00.799Z
license_str Other — see source repository
provenance_str_mv Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository
publishDate 2013
publishDateRange 2013
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publisher University of Pretoria
publisherStr University of Pretoria
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source_str UPSpace — University of Pretoria Institutional Repository
spelling oai:repository.up.ac.za:2263/29082 An SRAM system based on a reduced-area four-transistor CMOS SRAM cell Du Plessis, Monuko upetd@up.ac.za De Beer, Stephan Joseph Electric circuits Electric engineering Transistor circuits Asynchronous circuits Digital data processing systems UCTD Dissertation (MEng (Electronic Engineering))--University of Pretoria, 2002. The traditional method of implementing SRAM in CMOS is via a six-transistor cell and five routing lines. If the number of transistors and the number of wires could be reduced, the packing density of the memory cells could be increased, and the area reduced. This document describes the design of an SRAM system based on a new four¬transistor SRAM cell. The primary design goal was to create a functional system, so that the relationship between reduced cell area and a potentially reduced system area could be investigated. A new write method and associated array structure has been used, and the design of the system parameters was accomplished using static noise margin theory. The power dissipation and percentage reduction in cell area have been improved over previous designs. The circuits to achieve the access to the cell have been designed and simulated. These include low-impedance driver circuits, that allow the power supply of the cell's devices to be individually modified to read and write the cell, and a current sense amplifier system to convert the output current to a digital voltage. These circuits allow complete and accurate control to be achieved, but a price is paid for the complexity in terms of layout area. The SRAM system emulates a standard SRAM, and could therefore be used to replace current SRAM implementations. The design was simulated on a system level, and found to operate correctly. Although it is outperformed by its six-transistor cell counterpart in terms of power dissipation, speed and layout area, the groundwork for defining further research and improving the characteristics of further designs has been laid. Electrical, Electronic and Computer Engineering unrestricted 2013-09-07T14:50:00Z 2005-10-28 2013-09-07T14:50:00Z 2000-09-07 2002-09-28 2005-10-27 Dissertation De Beer, SJ 2002, An SRAM system based on a reduced-area four-transistor CMOS SRAM cell, MEng dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/29082 > H616/ag http://hdl.handle.net/2263/29082 http://upetd.up.ac.za/thesis/available/etd-10272005-143122/ © 2002, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf application/pdf application/pdf application/pdf application/pdf University of Pretoria
spellingShingle Electric circuits
Electric engineering
Transistor circuits
Asynchronous circuits
Digital data processing systems
UCTD
An SRAM system based on a reduced-area four-transistor CMOS SRAM cell
title An SRAM system based on a reduced-area four-transistor CMOS SRAM cell
title_full An SRAM system based on a reduced-area four-transistor CMOS SRAM cell
title_fullStr An SRAM system based on a reduced-area four-transistor CMOS SRAM cell
title_full_unstemmed An SRAM system based on a reduced-area four-transistor CMOS SRAM cell
title_short An SRAM system based on a reduced-area four-transistor CMOS SRAM cell
title_sort sram system based on a reduced area four transistor cmos sram cell
topic Electric circuits
Electric engineering
Transistor circuits
Asynchronous circuits
Digital data processing systems
UCTD
url http://hdl.handle.net/2263/29082
http://upetd.up.ac.za/thesis/available/etd-10272005-143122/