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Electrical characterisation of particle irradiated 4H-SiC
Dissertation (MSc)--University of Pretoria, 2014.
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| Format: | Thesis |
| Language: | English |
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University of Pretoria
2015
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| _version_ | 1867613553034264576 |
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| access_status_str | Open Access |
| author2 | Auret, F.D. (Francois Danie) |
| author_browse | Auret, F.D. (Francois Danie) |
| author_facet | Auret, F.D. (Francois Danie) |
| collection | Thesis |
| dc_rights_str_mv | © 2014 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. |
| description | Dissertation (MSc)--University of Pretoria, 2014. |
| format | Thesis |
| id | oai:repository.up.ac.za:2263/43220 |
| institution | University of Pretoria (South Africa) |
| language | English |
| last_indexed | 2026-06-10T12:37:58.345Z |
| license_str | Other — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository |
| publishDate | 2015 |
| publishDateRange | 2015 |
| publishDateSort | 2015 |
| publisher | University of Pretoria |
| publisherStr | University of Pretoria |
| record_format | dspace |
| source_str | UPSpace — University of Pretoria Institutional Repository |
| spelling | oai:repository.up.ac.za:2263/43220 Electrical characterisation of particle irradiated 4H-SiC Auret, F.D. (Francois Danie) paradzah.alex@gmail.com Diale, M. (Mmantsae Moche) Paradzah, Alexander Tapera 4H-SiC Irradiation Electrical characterization DLTS Semiconductors UCTD Dissertation (MSc)--University of Pretoria, 2014. Silicon Carbide is a wide bandgap semiconductor with excellent physical and opto-electrical properties. Among these excellent properties are its radiation hardness, high temperature operation and high electric field breakdown. SiC can therefore be used in the fabrication of electronic devices capable of operating in harsh environments, e.g. radiation detectors. Like any other semiconductor, the success of SiC in device fabrication depends on elimination of defects that are detrimental to desired devices or controlled introduction of desired energy levels. The first step in so doing is understanding the defects that are either found in as grown material, introduced during device fabrication or introduced during device operation. In this study nickel ohmic and Schottky contacts were resistively fabricated on n-type 4H-SiC with a net doping density of 4 × 1014 cm-3. Current-Voltage (I-V), Capacitance-Voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and Laplace-DLTS measurement techniques were used to electrically characterize the fabricated Schottky diodes. The diodes were then irradiated with low energy electrons, alpha particles and protons. The characterization measurements were repeated after irradiation to evaluate the effect of irradiation on the electrical properties of SiC. It was observed from I-V measurements that electron, alpha particle and proton irradiations do not significantly affect the rectification of Ni/SiC Schottky contacts. C-V measurements indicated that the free carrier removal rate is higher for alpha particle irradiation as compared to electron irradiation. The irradiated diodes were annealed in argon ambient and significant recovery in the free carrier concentration was observed below 600 °C. The free carrier concentration of proton irradiated Schottky contacts, which was decreased to below detection levels was also partly recovered after heat treatment of up to 400 °C. DLTS and Laplace-DLTS measurements revealed the presence of four defect levels in as-grown 4H-SiC. These defects have been labelled E0.10, E0.12, E0.17 and E0.69 where the subscripts indicate the activation energies of the respective defects. Electron, alpha particle and proton irradiations were observed to induce three more defect levels with activation energies of 0.42 eV, 0.62 eV and 0.76 eV. Additionally, these irradiations were also observed to enhance the concentration of level E0.69. All the radiation induced defects were annealed out at temperatures below 600 °C. In proton irradiated diodes, another defect with activation energy of 0.31 eV was observed after annealing the irradiated diodes at 625 °C. lk2014 Physics MSc Unrestricted 2015-01-19T12:11:17Z 2015-01-19T12:11:17Z 2014/12/12 2014 Dissertation Paradzah, AT 2014, Electrical characterisation of particle irradiated 4H-SiC, MSc Dissertation, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/43220> M14/9/204 http://hdl.handle.net/2263/43220 en © 2014 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria |
| spellingShingle | 4H-SiC Irradiation Electrical characterization DLTS Semiconductors UCTD Electrical characterisation of particle irradiated 4H-SiC |
| title | Electrical characterisation of particle irradiated 4H-SiC |
| title_full | Electrical characterisation of particle irradiated 4H-SiC |
| title_fullStr | Electrical characterisation of particle irradiated 4H-SiC |
| title_full_unstemmed | Electrical characterisation of particle irradiated 4H-SiC |
| title_short | Electrical characterisation of particle irradiated 4H-SiC |
| title_sort | electrical characterisation of particle irradiated 4h sic |
| topic | 4H-SiC Irradiation Electrical characterization DLTS Semiconductors UCTD |
| url | http://hdl.handle.net/2263/43220 |