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Electrical characterization of ZnO and ZnO Schottky barrier diodes

Dissertation (MSc)--University of Pretoria, 2016.

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Other Authors: Diale, M. (Mmantsae Moche)
Format: Thesis
Language:English
Published: University of Pretoria 2016
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access_status_str Open Access
author2 Diale, M. (Mmantsae Moche)
author_browse Diale, M. (Mmantsae Moche)
author_facet Diale, M. (Mmantsae Moche)
collection Thesis
dc_rights_str_mv © 2016, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria.
description Dissertation (MSc)--University of Pretoria, 2016.
format Thesis
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institution University of Pretoria (South Africa)
language English
last_indexed 2026-06-10T12:37:50.718Z
license_str Other — see source repository
provenance_str_mv Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository
publishDate 2016
publishDateRange 2016
publishDateSort 2016
publisher University of Pretoria
publisherStr University of Pretoria
record_format dspace
source_str UPSpace — University of Pretoria Institutional Repository
spelling oai:repository.up.ac.za:2263/53526 Electrical characterization of ZnO and ZnO Schottky barrier diodes Diale, M. (Mmantsae Moche) meehleketo@gmail.com Auret, F.D. (Francois Danie) Mayimele, Meeheketo Advice UCTD Dissertation (MSc)--University of Pretoria, 2016. The electrical properties of ZnO and Schottky contacts to ZnO have been investigated using different techniques. Good rectifying Schottky contact has been fabricated on ZnO, after treating the samples with boiling hydrogen peroxide. Electrical properties of these Schottky contacts have been investigated using current-voltage (IV) and capacitance-voltage (CV) measurements in the temperature range (20-350 K). Schottky barrier heights (SBHs) determined using temperature-dependent IV measurements have been observed to increase with temperature and this has been explained as an effect of the barrier inhomogeities. The Schottky contacts have indicated the dominance of predominantly thermionic emission at room temperature and the existence of other current transport mechanisms at lower temperatures. Palladium Schottky barrier diodes on melt grown n-ZnO were irradiated with alpha-particles from a Van de Graaff accelerator. To determine the effect of these changes on the electrical characteristics of Schottky contacts several techniques were used. The CV measurements showed a decrease in the free carrier concentration with increase in fluence. Deep level transient spectroscopy (DLTS) was used to determine the concentrations, capture cross-sections, introduction rate and energy level in the bandgap of deep level defects introduced during the alpha-particles irradiation. Physics MSc Unrestricted 2016-07-01T10:33:19Z 2016-07-01T10:33:19Z 2016-04-05 2016 Dissertation Mayimele, MA 2016, Electrical characterization of ZnO and ZnO Schottky barrier diodes, MSc Dissertation, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/53526> A2016 http://hdl.handle.net/2263/53526 en © 2016, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria
spellingShingle UCTD
Electrical characterization of ZnO and ZnO Schottky barrier diodes
title Electrical characterization of ZnO and ZnO Schottky barrier diodes
title_full Electrical characterization of ZnO and ZnO Schottky barrier diodes
title_fullStr Electrical characterization of ZnO and ZnO Schottky barrier diodes
title_full_unstemmed Electrical characterization of ZnO and ZnO Schottky barrier diodes
title_short Electrical characterization of ZnO and ZnO Schottky barrier diodes
title_sort electrical characterization of zno and zno schottky barrier diodes
topic UCTD
url http://hdl.handle.net/2263/53526