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MODELLING OF A LOW PHASE NOISE RING OSCILLATOR USING SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS
Dissertation (MEng)--University of Pretoria, 2016.
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| Format: | Thesis |
| Language: | English |
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University of Pretoria
2016
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| _version_ | 1867613627426537472 |
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| access_status_str | Open Access |
| author2 | Sinha, Saurabh |
| author_browse | Sinha, Saurabh |
| author_facet | Sinha, Saurabh |
| collection | Thesis |
| dc_rights_str_mv | © 2016 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. |
| description | Dissertation (MEng)--University of Pretoria, 2016. |
| format | Thesis |
| id | oai:repository.up.ac.za:2263/58069 |
| institution | University of Pretoria (South Africa) |
| language | English |
| last_indexed | 2026-06-10T12:39:09.096Z |
| license_str | Other — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository |
| publishDate | 2016 |
| publishDateRange | 2016 |
| publishDateSort | 2016 |
| publisher | University of Pretoria |
| publisherStr | University of Pretoria |
| record_format | dspace |
| source_str | UPSpace — University of Pretoria Institutional Repository |
| spelling | oai:repository.up.ac.za:2263/58069 MODELLING OF A LOW PHASE NOISE RING OSCILLATOR USING SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS Sinha, Saurabh van Niekerk, Sarel Johannes Lodiwikus EEY890 UCTD Dissertation (MEng)--University of Pretoria, 2016. In this dissertation, the phase noise performance of single-ended ring oscillators was investigated to determine their suitability in wideband, low phase noise oscillator applications. The main focus was on improving the phase noise performance of the voltage-controlled oscillator (VCO). The VCO was implemented using a custom two-stage single-ended ring oscillator configuration. The research focus was on modelling the phase noise of the VCO. This was accomplished by adapting the impulse sensitivity function for the noise sources present in the circuit. This analysis led to a closed-form phase noise expression defining the process parameters and component values. The expression was verified by way of a simulation comparison generated by SpectreRF and the process design kit supplied by metal-oxide semiconductor implementation service for the design process. A low-noise amplifier based on a complementary metal-oxide semiconductor inverter was characterised and used to amplify the oscillator signal and transform the output impedance of the oscillator to 50 Ω. The fabricated integrated circuit (IC) was soldered onto a printed circuit board (PCB) and measurements were conducted. It was verified that the direct current-biasing of the prototyped IC was correct, but a 17% variation was found in the passive component values. This, together with a poor ground plane choice on the IC, prohibited the device from working like the simulated version. The simulated oscillator demonstrated a phase noise performance of -80 dBc/Hz at a 1 MHz offset from the carrier. The oscillator also had a tuning range of 72% and consumed on average 4.55 mW, thus providing a VCO figure of merit of -142 dBc/Hz to -182 dBc/Hz, depending on the oscillation frequency. The size of the oscillator on the chip was 80 µm by 100 µm, occupying a total area of 0.008 mm2. This area excluded the size of the bonding pads. UP Electrical, Electronic and Computer Engineering MEng unrestricted 2016-11-15T06:33:49Z 2016-11-15T06:33:49Z 2017-04 2016 Dissertation van Niekerk, SJL 2016, MODELLING OF A LOW PHASE NOISE RING OSCILLATOR USING SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS, MEng Dissertation, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/58069> van Niekerk, SJL 2016, MODELLING OF A LOW PHASE NOISE RING OSCILLATOR USING SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS, MEng Dissertation, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/58069> S25177495 http://hdl.handle.net/2263/58069 en © 2016 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria University of Pretoria |
| spellingShingle | EEY890 UCTD MODELLING OF A LOW PHASE NOISE RING OSCILLATOR USING SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS |
| title | MODELLING OF A LOW PHASE NOISE RING OSCILLATOR USING SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS |
| title_full | MODELLING OF A LOW PHASE NOISE RING OSCILLATOR USING SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS |
| title_fullStr | MODELLING OF A LOW PHASE NOISE RING OSCILLATOR USING SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS |
| title_full_unstemmed | MODELLING OF A LOW PHASE NOISE RING OSCILLATOR USING SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS |
| title_short | MODELLING OF A LOW PHASE NOISE RING OSCILLATOR USING SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS |
| title_sort | modelling of a low phase noise ring oscillator using silicon germanium heterojunction bipolar transistors |
| topic | EEY890 UCTD |
| url | http://hdl.handle.net/2263/58069 |