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Migration behaviour of Europium implanted into single crystalline 6H-SiC

Dissertation (MSc)--University of Pretoria, 2017.

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Other Authors: Hlatshwayo, Thulani Thokozani
Format: Thesis
Language:English
Published: University of Pretoria 2018
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access_status_str Open Access
author2 Hlatshwayo, Thulani Thokozani
author_browse Hlatshwayo, Thulani Thokozani
author_facet Hlatshwayo, Thulani Thokozani
collection Thesis
dc_rights_str_mv © 2018 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria.
description Dissertation (MSc)--University of Pretoria, 2017.
format Thesis
id oai:repository.up.ac.za:2263/65916
institution University of Pretoria (South Africa)
language English
last_indexed 2026-06-10T12:39:00.799Z
license_str Other — see source repository
provenance_str_mv Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository
publishDate 2018
publishDateRange 2018
publishDateSort 2018
publisher University of Pretoria
publisherStr University of Pretoria
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source_str UPSpace — University of Pretoria Institutional Repository
spelling oai:repository.up.ac.za:2263/65916 Migration behaviour of Europium implanted into single crystalline 6H-SiC Hlatshwayo, Thulani Thokozani u10064487@tuks.co.za Malherbe, Johan B. Mohlala, Tshegofatso Magapeletse UCTD Dissertation (MSc)--University of Pretoria, 2017. The release of radioactive fission products during nuclear energy reactor operation imposes a serious danger to personnel’s health and the environment. In a modern Pebble Bed Modular Reactor (PBMR) TristructuralIsotropic (TRISO) fuel, silicon carbide (SiC) is used as the main barrier to fission products (FPs). TRISO particles retain most of the FPs well with the exception of silver (Ag), strontium (Sr) and Europium (Eu) during operation. The migration behavior of Ag in SiC has been thoroughly investigated over decades with fewer investigations done on the migration behavior of Sr and Eu. In this study the migration behavior of Europium (Eu) implanted into 6H-SiC was investigated using Rutherford backscattering spectrometry (RBS), RBS in a channeling mode (RBS-C) and scanning electron microscopy (SEM). Eu ions of 360 keV were implanted into 6H-SiC at 600°C to a fluence of 1×1016 cm-2. This high temperature was chosen because PBMR reactors are designed to operate at high temperatures. The implanted samples were sequentially annealed at temperatures ranging from 1000 to 1400 °C, in steps of 100 °C for 5 hours. RBS-C showed that implantation of Eu into 6H-SiC at 600 °C retained crystallinity with some radiation damage. Reduction of the radiation damage retained after implantation, already took place after annealing at 1000 °C. This annealing of radiation damage progressed with increasing annealing temperature up to 1400 °C. A shift of Eu towards the surface took place after annealing at 1000 °C. This shift became more pronounced and was accompanied by loss of Eu from the surface at annealing temperatures >1000 °C. This shift was accompanied by broadening of Eu peak, indicating Fickian diffusion occurring after annealing at temperatures > 1100 °C. The migration of Eu occurring concurrently with the annealing of radiation damage was explained by trapping and de-trapping of Eu by radiation damage. The diffusion coefficients were found to be 1.56× 10- 18 m2s-1 and 2.98× 10-18m2s-1at 1200 °C and 1300 °C respectively. Physics MSc Unrestricted 2018-07-25T09:00:54Z 2018-07-25T09:00:54Z 2018/04/18 2017 Dissertation Mohlala, TM 2017, Migration behaviour of Europium implanted into single crystalline 6H-SiC, MSc Dissertation, University of Pretoria, Pretoria, viewed yymmdd <http://hdl.handle.net/2263/65916> A2018 http://hdl.handle.net/2263/65916 en © 2018 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria
spellingShingle UCTD
Migration behaviour of Europium implanted into single crystalline 6H-SiC
title Migration behaviour of Europium implanted into single crystalline 6H-SiC
title_full Migration behaviour of Europium implanted into single crystalline 6H-SiC
title_fullStr Migration behaviour of Europium implanted into single crystalline 6H-SiC
title_full_unstemmed Migration behaviour of Europium implanted into single crystalline 6H-SiC
title_short Migration behaviour of Europium implanted into single crystalline 6H-SiC
title_sort migration behaviour of europium implanted into single crystalline 6h sic
topic UCTD
url http://hdl.handle.net/2263/65916