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Effects of silver and strontium ions co-implanted into silicon carbide

Dissertation (MSc (Physics))--University of Pretoria, 2020.

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Other Authors: Hlatshwayo, Thulani Thokozani
Format: Thesis
Language:English
Published: University of Pretoria 2020
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author2 Hlatshwayo, Thulani Thokozani
author_browse Hlatshwayo, Thulani Thokozani
author_facet Hlatshwayo, Thulani Thokozani
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dc_rights_str_mv © 2019 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria.
description Dissertation (MSc (Physics))--University of Pretoria, 2020.
format Thesis
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institution University of Pretoria (South Africa)
language English
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spelling oai:repository.up.ac.za:2263/77386 Effects of silver and strontium ions co-implanted into silicon carbide Hlatshwayo, Thulani Thokozani nqophisamtshonisi@gmail.com Mlambo, Mbuso Mtshonisi, Nqophisa Physics UCTD Dissertation (MSc (Physics))--University of Pretoria, 2020. In modern nuclear reactors safety is improved by cladding the fuel kernel with chemical vapor deposited layers of pyrolytic carbon and silicon carbide. Amid these cladding layers SiC is the primary diffusion barrier of radioactive fission products. During normal operations at about 900 ℃ to 1250 ℃, the coated fuel particle retains almost all the radioactive fission products excluding silver (Ag), strontium (Sr) and europium (Eu). Substantial research has been studied on the migration behavior of Ag in SiC while limited work has been done on the migration behavior of Sr and Eu in SiC. Moreover, less is known on the migration behavior of Ag in the presence of other important radioactive fission products in SiC. In this study, the effects of Ag and Sr co-implanted into polycrystalline SiC were studied. 360 keV of Ag and Sr ions were individually implanted into polycrystalline SiC, both to a fluence of 2×〖10〗^16 〖cm〗^(-2) at 600 ℃ (Ag-SiC and Sr-SiC). Some of the Ag-SiC samples were then implanted with 280 keV Sr ions to a fluence of 2×〖10〗^16 〖 cm〗^(-2) at 600 ℃ (Ag&Sr-SiC). This high temperature of implantation was chosen to maintain the crystallinity of the substrate and also the modern nuclear reactors are premeditated to function at elevated temperatures. The implanted samples were isochronally annealed at temperatures varying from 1000 ℃ to 1400 ℃ in steps of 100 ℃ for 5 hours. Structural and surface morphological evaluations were monitored by Raman spectroscopy and scanning electron microscopy (SEM) while the migration behavior of implanted species were monitored by Rutherford backscattered spectrometry (RBS). Both individual and co-implantations retained crystallinity of polycrystalline-SiC with some defects. More defects were observed in the co-implanted samples. Annealing the samples caused progressive annealing of defects and appearance of SiC crystallites on the surface. These crystallites grew with annealing temperature and their growth was enhanced in the samples implanted with Ag. Neither migration nor loss of Sr were observed in Sr-SiC samples throughout the annealing steps. While annealing the Ag-SiC and Ag&Sr-SiC samples affected implants to shift towards the surface accompanied by loss at temperatures above 1400 ℃. Hence the presence of Ag has role in the migration and the loss of the implanted species. Physics MSc (Physics) Unrestricted 2020-12-17T11:49:28Z 2020-12-17T11:49:28Z 2021 2020 Dissertation * A2021 http://hdl.handle.net/2263/77386 en © 2019 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria
spellingShingle Physics
UCTD
Effects of silver and strontium ions co-implanted into silicon carbide
title Effects of silver and strontium ions co-implanted into silicon carbide
title_full Effects of silver and strontium ions co-implanted into silicon carbide
title_fullStr Effects of silver and strontium ions co-implanted into silicon carbide
title_full_unstemmed Effects of silver and strontium ions co-implanted into silicon carbide
title_short Effects of silver and strontium ions co-implanted into silicon carbide
title_sort effects of silver and strontium ions co implanted into silicon carbide
topic Physics
UCTD
url http://hdl.handle.net/2263/77386