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Determination of implantation profiles by (p,y)-resonance reactions
Thesis (PhD)--University of Pretoria, 1995.
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| Format: | Thesis |
| Language: | English |
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University of Pretoria
2022
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| _version_ | 1867613524179550208 |
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| access_status_str | Open Access |
| author2 | Friedland, Erich Karl Helmuth |
| author_browse | Friedland, Erich Karl Helmuth |
| author_facet | Friedland, Erich Karl Helmuth |
| collection | Thesis |
| dc_rights_str_mv | © 2020 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. |
| description | Thesis (PhD)--University of Pretoria, 1995. |
| format | Thesis |
| id | oai:repository.up.ac.za:2263/85261 |
| institution | University of Pretoria (South Africa) |
| language | English |
| last_indexed | 2026-06-10T12:37:30.755Z |
| license_str | Other — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository |
| publishDate | 2022 |
| publishDateRange | 2022 |
| publishDateSort | 2022 |
| publisher | University of Pretoria |
| publisherStr | University of Pretoria |
| record_format | dspace |
| source_str | UPSpace — University of Pretoria Institutional Repository |
| spelling | oai:repository.up.ac.za:2263/85261 Determination of implantation profiles by (p,y)-resonance reactions Friedland, Erich Karl Helmuth Hayes, Michael UCTD Determination implantation profiles (p,y)-resonance reactions Thesis (PhD)--University of Pretoria, 1995. The importance of ion implantation in physics and technology has steadily increased over the years. It is a reliable technique to introduce species into a target, altering the chemical, metallurgical, optical and electronic properties of the target material. Measurements of the depth distribution profiles of the implanted species provide information on a wide range of topics, including ion-solid interactions, doping and diffusion phenomena. Several techniques have been developed in order to determine the depth distribution profiles of implanted ions. Destructive techniques, such as etching and sputtering provide this information, but cannot be used in diffusion studies. Rutherford backscattering on the other hand is a non-destructive method, but is not very suitable for implanted ions of which the mass is smaller than that of the target material. Nuclear reaction analysis provides a non-destructive method of determining amongst others the implantation profile of ions with a mass number smaller or similar to that of the target material into which it is implanted. Nuclear reaction analyses with narrow and strong resonances are used for high resolution measurements. Such resonances are unfortunately not available for all light elements. For this study, nuclear reaction analysis was employed to determine the profiles of 13C+ and 27 Al+ ions implanted into silicon, gallium arsenide, magnesium and stainless steel. The 13C+ ions were detected using the 13C(p,y)14 N nuclear reactions. Particularly suited for this study is the resonance at 1.75 MeV which has a resonance width of 75 eV. During the investigation of the 27 Ai+ implantation, the 27 Al(p, y)28 Si nuclear reaction was used. Here the resonance at 0.992 MeV is employed which has a resonance width of 100 eV. The projected range, straggling width, skewness and kurtosis of the implantation profiles are presented and compared to those values obtained by the theoretical predictions of the TRIM 91.14 code. Physics PhD Unrestricted 2022-05-17T11:19:37Z 2022-05-17T11:19:37Z 28/7/2021 1995 Thesis * https://repository.up.ac.za/handle/2263/85261 en © 2020 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria |
| spellingShingle | UCTD Determination implantation profiles (p,y)-resonance reactions Determination of implantation profiles by (p,y)-resonance reactions |
| title | Determination of implantation profiles by (p,y)-resonance reactions |
| title_full | Determination of implantation profiles by (p,y)-resonance reactions |
| title_fullStr | Determination of implantation profiles by (p,y)-resonance reactions |
| title_full_unstemmed | Determination of implantation profiles by (p,y)-resonance reactions |
| title_short | Determination of implantation profiles by (p,y)-resonance reactions |
| title_sort | determination of implantation profiles by p y resonance reactions |
| topic | UCTD Determination implantation profiles (p,y)-resonance reactions |
| url | https://repository.up.ac.za/handle/2263/85261 |