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Electrical characterization of semiconductor heterostructures
Dissertation (MSc (Physics))--University of Pretoria, 1992.
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| Format: | Thesis |
| Language: | English |
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University of Pretoria
2022
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| _version_ | 1867613622710042624 |
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| access_status_str | Open Access |
| author2 | Auret, F.D. (Francois Danie) |
| author_browse | Auret, F.D. (Francois Danie) |
| author_facet | Auret, F.D. (Francois Danie) |
| collection | Thesis |
| dc_rights_str_mv | © 2020 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. |
| description | Dissertation (MSc (Physics))--University of Pretoria, 1992. |
| format | Thesis |
| id | oai:repository.up.ac.za:2263/85323 |
| institution | University of Pretoria (South Africa) |
| language | English |
| last_indexed | 2026-06-10T12:39:04.809Z |
| license_str | Other — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository |
| publishDate | 2022 |
| publishDateRange | 2022 |
| publishDateSort | 2022 |
| publisher | University of Pretoria |
| publisherStr | University of Pretoria |
| record_format | dspace |
| source_str | UPSpace — University of Pretoria Institutional Repository |
| spelling | oai:repository.up.ac.za:2263/85323 Electrical characterization of semiconductor heterostructures Auret, F.D. (Francois Danie) Kunert, Herbert W. Meyer, Walter Ernst UCTD Electrical characterization semiconductor heterostructures Dissertation (MSc (Physics))--University of Pretoria, 1992. Advances in growth techniques for semiconductor microstructures have led to a demand for more sophisticated characterization techniques, suitable for more accurate characterization of microstructures. Capacitance-voltage (CV) profiling provides a relatively inexpensive technique suitable for the characterization of doping profiles, isotype heterojunctions, and delta doped structures. Furthermore, this technique can easily be adapted to measure a large number of samples on a routine basis. In this dissertation the application of the CV profiling technique to isotype heterostructures and delta doped structures is described. The results obtained by CV measurements on delta doped structures are compared to those obtained by secondary ion mass spectroscopy (SIMS). Physics MSc (Physics) Unrestricted 2022-05-17T11:20:11Z 2022-05-17T11:20:11Z 30/7/2021 1992 Dissertation * https://repository.up.ac.za/handle/2263/85323 en © 2020 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria |
| spellingShingle | UCTD Electrical characterization semiconductor heterostructures Electrical characterization of semiconductor heterostructures |
| title | Electrical characterization of semiconductor heterostructures |
| title_full | Electrical characterization of semiconductor heterostructures |
| title_fullStr | Electrical characterization of semiconductor heterostructures |
| title_full_unstemmed | Electrical characterization of semiconductor heterostructures |
| title_short | Electrical characterization of semiconductor heterostructures |
| title_sort | electrical characterization of semiconductor heterostructures |
| topic | UCTD Electrical characterization semiconductor heterostructures |
| url | https://repository.up.ac.za/handle/2263/85323 |