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The effect of palladium deposition on electrically active defects in irradiated silicon
Thesis (PhD (Physics))--University of Pretoria, 2023.
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| Language: | English |
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University of Pretoria
2024
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| _version_ | 1867613696186908672 |
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| access_status_str | Open Access |
| author2 | Meyer, W.E. (Walter Ernst) |
| author_browse | Meyer, W.E. (Walter Ernst) |
| author_facet | Meyer, W.E. (Walter Ernst) |
| collection | Thesis |
| dc_rights_str_mv | © 2023 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. |
| description | Thesis (PhD (Physics))--University of Pretoria, 2023. |
| format | Thesis |
| id | oai:repository.up.ac.za:2263/95527 |
| institution | University of Pretoria (South Africa) |
| language | English |
| last_indexed | 2026-06-10T12:40:14.906Z |
| license_str | Other — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository |
| publishDate | 2024 |
| publishDateRange | 2024 |
| publishDateSort | 2024 |
| publisher | University of Pretoria |
| publisherStr | University of Pretoria |
| record_format | dspace |
| source_str | UPSpace — University of Pretoria Institutional Repository |
| spelling | oai:repository.up.ac.za:2263/95527 The effect of palladium deposition on electrically active defects in irradiated silicon Meyer, W.E. (Walter Ernst) abrahamwillembarnard@gmail.com Auret, F.D. (Francois Danie) Barnard, Abraham Willem UCTD DLTS Deep-level transient spectroscopy Palladium Silicon Defects Sustainable Development Goals (SDGs) SDG-07: Affordable and clean energy Natural and agricultural science theses SDG-07 Thesis (PhD (Physics))--University of Pretoria, 2023. DLTS was used to study the effect of resistive physical vapour deposition of Pd Schottky contacts on the defects observed in an n-type Si substrate that was irradiated before deposition (“pre-irradiated”) and compared to defects in a diode that was irradiated after deposition (“post-irradiated”). In the post-irradiated samples, the familiar radiation-induced defects were observed. However, in the pre-irradiated samples, 13 new defects were observed, with DLTS signatures differing from those of the defects in the post-irradiated diodes. Out of the 13 newly observed defects, four defects, with activation energy of 0.180, 0.220, 0.360 and 0.607 eV, had DLTS signatures corresponding to defects previously observed in Pt-containing Si, while no match was found for other defects. The effect (referred to as the Pd Effect) was carefully studied, and it was found that the effect was only observed with Pd, and not when other metals including Au, Ni, Al, Ag were used. Careful experiments ruled out annealing during evaporation of the contact as a possible cause. Different sources of Pd were used in un-used crucibles in an attempt to avoid contamination, but the effect was observed in all cases. It was found that this phenomenon was inhibited by the presence of a thin intermediate layer, irrespective of the layer being Pd or Au. We therefore conclude that the effect is only observed when Pd is deposited directly on the irradiated Si surface. We believe that these defects are produced by defect-enhanced diffusion of Pd. Overall, the study enhances our understanding of defect behaviour in silicon-based devices, particularly under irradiation and metal deposition conditions, and reveals the unique properties and effects of Pd. Physics PhD (Physics) Unrestricted Faculty of Natural and Agricultural Sciences SDG-07: Affordable and clean energy 2024-04-15T13:55:25Z 2024-04-15T13:55:25Z 2024-04 2023-12 Dissertation * A2024 http://hdl.handle.net/2263/95527 https://doi.org/10.25403/UPresearchdata.25601622 en © 2023 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria |
| spellingShingle | UCTD DLTS Deep-level transient spectroscopy Palladium Silicon Defects Sustainable Development Goals (SDGs) SDG-07: Affordable and clean energy Natural and agricultural science theses SDG-07 The effect of palladium deposition on electrically active defects in irradiated silicon |
| title | The effect of palladium deposition on electrically active defects in irradiated silicon |
| title_full | The effect of palladium deposition on electrically active defects in irradiated silicon |
| title_fullStr | The effect of palladium deposition on electrically active defects in irradiated silicon |
| title_full_unstemmed | The effect of palladium deposition on electrically active defects in irradiated silicon |
| title_short | The effect of palladium deposition on electrically active defects in irradiated silicon |
| title_sort | effect of palladium deposition on electrically active defects in irradiated silicon |
| topic | UCTD DLTS Deep-level transient spectroscopy Palladium Silicon Defects Sustainable Development Goals (SDGs) SDG-07: Affordable and clean energy Natural and agricultural science theses SDG-07 |
| url | http://hdl.handle.net/2263/95527 https://doi.org/10.25403/UPresearchdata.25601622 |