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Metastable defects in alpha-particle irradiated n-GaAs
Dissertation (MSc (Physics))--University of Pretoria, 1997.
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| Format: | Thesis |
| Language: | English |
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University of Pretoria
2024
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| _version_ | 1867613571880321024 |
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| access_status_str | Open Access |
| author2 | Auret, F.D. (Francois Danie) |
| author_browse | Auret, F.D. (Francois Danie) |
| author_facet | Auret, F.D. (Francois Danie) |
| collection | Thesis |
| dc_rights_str_mv | © 2024 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. |
| description | Dissertation (MSc (Physics))--University of Pretoria, 1997. |
| format | Thesis |
| id | oai:repository.up.ac.za:2263/99559 |
| institution | University of Pretoria (South Africa) |
| language | English |
| last_indexed | 2026-06-10T12:38:16.420Z |
| license_str | Other — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from UPSpace — University of Pretoria Institutional Repository |
| publishDate | 2024 |
| publishDateRange | 2024 |
| publishDateSort | 2024 |
| publisher | University of Pretoria |
| publisherStr | University of Pretoria |
| record_format | dspace |
| source_str | UPSpace — University of Pretoria Institutional Repository |
| spelling | oai:repository.up.ac.za:2263/99559 Metastable defects in alpha-particle irradiated n-GaAs Auret, F.D. (Francois Danie) Goodman, S.A. (Stewart Alexander) Erasmus, Rudolph Marthinus Metastable Alpha-particle n-GaAs UCTD Dissertation (MSc (Physics))--University of Pretoria, 1997. The controlled introduction of defects in semiconductors by means of different types of irradiation, is a well-established technique in the study of semiconductor structures. It has application in the study of defects introduced in semiconductors in a radiation environment. One of the types of radiation readily encountered in a radiation environment, is alpha(a)-particle radiation, thus the influence of these particles on the electronic properties of semiconductors, and thus also GaAs, needs to be investigated. In this dissertation, the characteristics of a specific defect, termed Ea3, are researched and presented and we argue that it exhibits a metastable character. Along with Ea3, another less prominent defect, termed Ea8, was also found to be metastable. The presence of a metastable defect in a particular radiation environment has important consequences for the technological properties of the semiconductor host and thus for the design of devices on GaAs exposed to alpha particles. Physics MSc (Physics) 2024-11-27T09:16:14Z 2024-11-27T09:16:14Z 22/01/28 1997 Dissertation http://hdl.handle.net/2263/99559 en © 2024 University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria. application/pdf University of Pretoria |
| spellingShingle | Metastable Alpha-particle n-GaAs UCTD Metastable defects in alpha-particle irradiated n-GaAs |
| title | Metastable defects in alpha-particle irradiated n-GaAs |
| title_full | Metastable defects in alpha-particle irradiated n-GaAs |
| title_fullStr | Metastable defects in alpha-particle irradiated n-GaAs |
| title_full_unstemmed | Metastable defects in alpha-particle irradiated n-GaAs |
| title_short | Metastable defects in alpha-particle irradiated n-GaAs |
| title_sort | metastable defects in alpha particle irradiated n gaas |
| topic | Metastable Alpha-particle n-GaAs UCTD |
| url | http://hdl.handle.net/2263/99559 |