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Low impedance characterisation and modeling of high power LDMOS devices
Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2005.
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| Format: | Thesis |
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Stellenbosch : University of Stellenbosch
2006
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| _version_ | 1867614102804758528 |
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| access_status_str | Open Access |
| author | Malan, Pieter Jacob De Villiers |
| author2 | Van Niekerk, C. |
| author_browse | Malan, Pieter Jacob De Villiers Van Niekerk, C. |
| author_facet | Van Niekerk, C. Malan, Pieter Jacob De Villiers |
| author_sort | Malan, Pieter Jacob De Villiers |
| collection | Thesis |
| dc_rights_str_mv | University of Stellenbosch |
| description | Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2005. |
| format | Thesis |
| id | oai:scholar.sun.ac.za:10019.1/2510 |
| institution | Stellenbosch University (South Africa) |
| last_indexed | 2026-06-10T12:46:42.610Z |
| license_str | Other — see source repository |
| provenance_str_mv | Harvested via OAI-PMH from SUNScholar — Stellenbosch University Repository |
| publishDate | 2006 |
| publishDateRange | 2006 |
| publishDateSort | 2006 |
| publisher | Stellenbosch : University of Stellenbosch |
| publisherStr | Stellenbosch : University of Stellenbosch |
| record_format | dspace |
| source_str | SUNScholar — Stellenbosch University Repository |
| spelling | oai:scholar.sun.ac.za:10019.1/2510 Low impedance characterisation and modeling of high power LDMOS devices Malan, Pieter Jacob De Villiers Van Niekerk, C. Van der Walt, P. W. University of Stellenbosch. Faculty of Engineering. Dept. of Electrical and Electronic Engineering. Low Impedance Load Line Method TRL (Thru-Reflect-Line) Calibration Substrate Parameter Extraction Small-Signal Parameter Extraction Power amplifier LDMOS Dissertations -- Electrical and electronic engineering Theses -- Electrical and electronic engineering Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2005. In RF power transistor characterisation, the designer is confronted with low impedance measurements (typically from 1 Ohm to 12 Ohm). These transistors are contained in metal-ceramic packages of which the lead widths vary with power capability. This thesis presents a high-quality fixture design with low impedance TRL calibration standards for characterisation of an LDMOS transistor. Pre-matching networks are used to transform to the low impedance environment. Since these pre-matching networks are independent of the termination impedance, the low impedance port can always be designed to comply with the same dimension as the device which is being measured. 2006-11-13T06:35:55Z 2010-06-01T08:50:51Z 2006-11-13T06:35:55Z 2010-06-01T08:50:51Z 2005-12 Thesis http://hdl.handle.net/10019.1/2510 University of Stellenbosch 3717353 bytes application/pdf application/pdf Stellenbosch : University of Stellenbosch |
| spellingShingle | Low Impedance Load Line Method TRL (Thru-Reflect-Line) Calibration Substrate Parameter Extraction Small-Signal Parameter Extraction Power amplifier LDMOS Dissertations -- Electrical and electronic engineering Theses -- Electrical and electronic engineering Malan, Pieter Jacob De Villiers Low impedance characterisation and modeling of high power LDMOS devices |
| title | Low impedance characterisation and modeling of high power LDMOS devices |
| title_full | Low impedance characterisation and modeling of high power LDMOS devices |
| title_fullStr | Low impedance characterisation and modeling of high power LDMOS devices |
| title_full_unstemmed | Low impedance characterisation and modeling of high power LDMOS devices |
| title_short | Low impedance characterisation and modeling of high power LDMOS devices |
| title_sort | low impedance characterisation and modeling of high power ldmos devices |
| topic | Low Impedance Load Line Method TRL (Thru-Reflect-Line) Calibration Substrate Parameter Extraction Small-Signal Parameter Extraction Power amplifier LDMOS Dissertations -- Electrical and electronic engineering Theses -- Electrical and electronic engineering |
| url | http://hdl.handle.net/10019.1/2510 |
| work_keys_str_mv | AT malanpieterjacobdevilliers lowimpedancecharacterisationandmodelingofhighpowerldmosdevices |