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I–V and C–V characteristics and interface electron states of Al2O3/AlGaN/GaN structures

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Published in:Modern Electronic Materials
Format: Online Article RSS Article
Published: 2025
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_version_ 1864030189986512896
collection WordPress RSS
FRELIP Feed Integration
container_title Modern Electronic Materials
description
discipline_display Technology & Engineering
discipline_facet Technology & Engineering
format Online Article
RSS Article
genre Journal Article
id rss_article:12704
institution FRELIP
journal_source_facet Modern Electronic Materials
publishDate 2025
publishDateSort 2025
record_format rss_article
spellingShingle I–V and C–V characteristics and interface electron states of Al2O3/AlGaN/GaN structures
Manufacturing and Technology
Technology & Engineering — Computing
Technology & Engineering
sub_discipline_display Technology & Engineering — Computing
sub_discipline_facet Technology & Engineering — Computing
subject_display Manufacturing and Technology
Technology & Engineering — Computing
Technology & Engineering
Manufacturing and Technology
Technology & Engineering — Computing
Technology & Engineering
subject_facet Manufacturing and Technology
Technology & Engineering — Computing
Technology & Engineering
title I–V and C–V characteristics and interface electron states of Al2O3/AlGaN/GaN structures
title_auth I–V and C–V characteristics and interface electron states of Al2O3/AlGaN/GaN structures
title_full I–V and C–V characteristics and interface electron states of Al2O3/AlGaN/GaN structures
title_fullStr I–V and C–V characteristics and interface electron states of Al2O3/AlGaN/GaN structures
title_full_unstemmed I–V and C–V characteristics and interface electron states of Al2O3/AlGaN/GaN structures
title_short I–V and C–V characteristics and interface electron states of Al2O3/AlGaN/GaN structures
title_sort i–v and c–v characteristics and interface electron states of al2o3/algan/gan structures
topic Manufacturing and Technology
Technology & Engineering — Computing
Technology & Engineering
url https://moem.pensoft.net/article/180460/