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Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals

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Published in:Modern Electronic Materials
Format: Online Article RSS Article
Published: 2024
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container_title Modern Electronic Materials
description
discipline_display Technology & Engineering
discipline_facet Technology & Engineering
format Online Article
RSS Article
genre Journal Article
id rss_article:12738
institution FRELIP
journal_source_facet Modern Electronic Materials
publishDate 2024
publishDateSort 2024
record_format rss_article
spellingShingle Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
Manufacturing and Technology
Technology & Engineering — Computing
Technology & Engineering
sub_discipline_display Technology & Engineering — Computing
sub_discipline_facet Technology & Engineering — Computing
subject_display Manufacturing and Technology
Technology & Engineering — Computing
Technology & Engineering
Manufacturing and Technology
Technology & Engineering — Computing
Technology & Engineering
subject_facet Manufacturing and Technology
Technology & Engineering — Computing
Technology & Engineering
title Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
title_auth Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
title_full Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
title_fullStr Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
title_full_unstemmed Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
title_short Effect of chemical bond polarity on wafer and cleavage surface oxidation for GaAs, GaSb, InAs and InSb single crystals
title_sort effect of chemical bond polarity on wafer and cleavage surface oxidation for gaas, gasb, inas and insb single crystals
topic Manufacturing and Technology
Technology & Engineering — Computing
Technology & Engineering
url https://moem.pensoft.net/article/140714/