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Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics

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Published in:IEEE Journal of the Electron Devices Society
Format: Online Article RSS Article
Published: 2026
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container_title IEEE Journal of the Electron Devices Society
description
discipline_display Technology & Engineering
discipline_facet Technology & Engineering
format Online Article
RSS Article
genre Journal Article
id rss_article:31139
institution FRELIP
journal_source_facet IEEE Journal of the Electron Devices Society
publishDate 2026
publishDateSort 2026
record_format rss_article
spellingShingle Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics
Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
sub_discipline_display Technology & Engineering — Aerospace & Applied Tech
sub_discipline_facet Technology & Engineering — Aerospace & Applied Tech
subject_display Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
subject_facet Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
title Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics
title_auth Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics
title_full Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics
title_fullStr Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics
title_full_unstemmed Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics
title_short Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiNx Passivation Compatible to Gate Dielectrics
title_sort monolithic comparators on a novel platform of gan-based d/e-mode hemts by lpcvd sinx passivation compatible to gate dielectrics
topic Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
url http://ieeexplore.ieee.org/document/11357512