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Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity

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Bibliographic Details
Published in:IEEE Journal of the Electron Devices Society
Format: Online Article RSS Article
Published: 2026
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container_title IEEE Journal of the Electron Devices Society
description
discipline_display Technology & Engineering
discipline_facet Technology & Engineering
format Online Article
RSS Article
genre Journal Article
id rss_article:31141
institution FRELIP
journal_source_facet IEEE Journal of the Electron Devices Society
publishDate 2026
publishDateSort 2026
record_format rss_article
spellingShingle Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
sub_discipline_display Technology & Engineering — Aerospace & Applied Tech
sub_discipline_facet Technology & Engineering — Aerospace & Applied Tech
subject_display Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
subject_facet Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
title Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
title_auth Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
title_full Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
title_fullStr Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
title_full_unstemmed Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
title_short Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
title_sort simulation study on the scalability of channel-all-around reconfigurable field-effect transistors with gate-controlled polarity
topic Electronics
Technology & Engineering — Aerospace & Applied Tech
Technology & Engineering
url http://ieeexplore.ieee.org/document/11367430