Full Text Available
Note: Clicking the button above will open the full text document at the original institutional repository in a new window.
Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies”
Saved in:
| Published in: | IEEE Journal of the Electron Devices Society |
|---|---|
| Format: | Online Article RSS Article |
| Published: |
2026
|
| Subjects: | |
| Tags: |
No Tags, Be the first to tag this record!
|
Similar Items: Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies”
- PWM Dead Times in Automotive Traction Inverters using IGBT, SiC MOSFET, or Si/SiC Fusion Switch Power Modules
- Detection of Wire Lift-Off in Si-IGBTs and SiC-MOSFETs Using Machine Learning on Switching Waveforms
- Online Detection of SiC MOSFET Gate Oxide Degradation by Drain‐Source Voltage Surge in Inverter
- A Monolithic SiC MOSFET Behavioural Model with Full‐Temperature‐Range Capability: SPICE‐Compatible Structure and Experimental Verification
- Thermal Management and Experimental Validation of a Copper-Inlay PCB for SiC MOSFETs in High-Power EV Fast Chargers
- Development of ± 550 kV DC GIS Basin Insulator