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Optimizing the performance of extended-gate field-effect transistor (EGFET) pH sensor by regulating the structural properties of the nanostructured porous silicon layer
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| Published in: | Journal of Theoretical and Applied Physics |
|---|---|
| Format: | Online Article RSS Article |
| Published: |
2021
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| Subjects: | |
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| _version_ | 1868552849961517056 |
|---|---|
| collection | WordPress RSS FRELIP Feed Integration |
| container_title | Journal of Theoretical and Applied Physics |
| description | |
| discipline_display | Mathematics |
| discipline_facet | Mathematics |
| format | Online Article RSS Article |
| genre | Journal Article |
| id | rss_article:63157 |
| institution | FRELIP |
| journal_source_facet | Journal of Theoretical and Applied Physics |
| last_indexed | 2026-06-20T21:27:34.457Z |
| publishDate | 2021 |
| publishDateSort | 2021 |
| record_format | rss_article |
| spellingShingle | Optimizing the performance of extended-gate field-effect transistor (EGFET) pH sensor by regulating the structural properties of the nanostructured porous silicon layer Mathematics General Mathematics |
| sub_discipline_display | General |
| sub_discipline_facet | General |
| subject_display | Mathematics General Mathematics |
| subject_facet | Mathematics General Mathematics |
| title | Optimizing the performance of extended-gate field-effect transistor (EGFET) pH sensor by regulating the structural properties of the nanostructured porous silicon layer |
| title_alt | Optimización del rendimiento del sensor de pH de transistor de efecto de campo de puerta extendida (EGFET) mediante la regulación de las propiedades estructurales de la capa de silicio poroso nanoestructurado Optimisation des performances du capteur pH à transistor à effet de champ à grille étendue (EGFET) en régulant les propriétés structurelles de la couche de silicium poreux nanostructuré Otimização do desempenho do sensor de pH de transistor de efeito de campo de porta estendida (EGFET) regulando as propriedades estruturais da camada de silício poroso nanoestruturado |
| title_auth | Optimizing the performance of extended-gate field-effect transistor (EGFET) pH sensor by regulating the structural properties of the nanostructured porous silicon layer |
| title_es_txt | Optimización del rendimiento del sensor de pH de transistor de efecto de campo de puerta extendida (EGFET) mediante la regulación de las propiedades estructurales de la capa de silicio poroso nanoestructurado |
| title_fr_txt | Optimisation des performances du capteur pH à transistor à effet de champ à grille étendue (EGFET) en régulant les propriétés structurelles de la couche de silicium poreux nanostructuré |
| title_full | Optimizing the performance of extended-gate field-effect transistor (EGFET) pH sensor by regulating the structural properties of the nanostructured porous silicon layer |
| title_fullStr | Optimizing the performance of extended-gate field-effect transistor (EGFET) pH sensor by regulating the structural properties of the nanostructured porous silicon layer |
| title_full_unstemmed | Optimizing the performance of extended-gate field-effect transistor (EGFET) pH sensor by regulating the structural properties of the nanostructured porous silicon layer |
| title_pt_txt | Otimização do desempenho do sensor de pH de transistor de efeito de campo de porta estendida (EGFET) regulando as propriedades estruturais da camada de silício poroso nanoestruturado |
| title_short | Optimizing the performance of extended-gate field-effect transistor (EGFET) pH sensor by regulating the structural properties of the nanostructured porous silicon layer |
| title_sort | optimizing the performance of extended-gate field-effect transistor (egfet) ph sensor by regulating the structural properties of the nanostructured porous silicon layer |
| topic | Mathematics General Mathematics |
| url | https://link.springer.com/article/10.1007/s40094-020-00403-3 |