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Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights

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Published in:IEEE Journal of the Electron Devices Society
Format: Online Article RSS Article
Published: 2025
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container_title IEEE Journal of the Electron Devices Society
description
discipline_display Electronics
discipline_facet Electronics
format Online Article
RSS Article
genre Journal Article
id rss_article:74167
institution FRELIP
journal_source_facet IEEE Journal of the Electron Devices Society
last_indexed 2026-06-20T21:31:51.751Z
publishDate 2025
publishDateSort 2025
record_format rss_article
spellingShingle Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights
Electronics
General
Electronics
sub_discipline_display General
sub_discipline_facet General
subject_display Electronics
General
Electronics
subject_facet Electronics
General
Electronics
title Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights
title_alt Fiabilidad de HEMTs de AlScN/GaN bajo mediciones pulsadas y pruebas de estrés por pasos HTRB: perspectivas experimentales y TCAD
Fiabilité des HEMTs AlScN/GaN sous mesures pulsées et tests de stress par paliers HTRB : aperçus expérimentaux et TCAD
Confiabilidade de HEMTs AlScN/GaN sob Medidas Pulsadas e Testes de Estresse HTRB: Insights Experimentais e TCAD
title_auth Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights
title_es_txt Fiabilidad de HEMTs de AlScN/GaN bajo mediciones pulsadas y pruebas de estrés por pasos HTRB: perspectivas experimentales y TCAD
title_fr_txt Fiabilité des HEMTs AlScN/GaN sous mesures pulsées et tests de stress par paliers HTRB : aperçus expérimentaux et TCAD
title_full Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights
title_fullStr Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights
title_full_unstemmed Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights
title_pt_txt Confiabilidade de HEMTs AlScN/GaN sob Medidas Pulsadas e Testes de Estresse HTRB: Insights Experimentais e TCAD
title_short Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights
title_sort reliability of alscn/gan hemts under pulsed measurements and htrb step-stress tests: experimental and tcad insights
topic Electronics
General
Electronics
url http://ieeexplore.ieee.org/document/11282436