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Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing

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Published in:IEEE Journal of the Electron Devices Society
Format: Online Article RSS Article
Published: 2025
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container_title IEEE Journal of the Electron Devices Society
description
discipline_display Electronics
discipline_facet Electronics
format Online Article
RSS Article
genre Journal Article
id rss_article:74171
institution FRELIP
journal_source_facet IEEE Journal of the Electron Devices Society
last_indexed 2026-06-20T21:31:51.751Z
publishDate 2025
publishDateSort 2025
record_format rss_article
spellingShingle Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing
Electronics
General
Electronics
sub_discipline_display General
sub_discipline_facet General
subject_display Electronics
General
Electronics
subject_facet Electronics
General
Electronics
title Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing
title_alt Evolución dinámica del hidrógeno en transistores IGZO para mejora de PBTI mediante recocido en atmósfera a baja temperatura
Évolution dynamique de l'hydrogène dans les transistors IGZO pour l'amélioration du PBTI par recuit à basse température sous atmosphère
Evolução Dinâmica do Hidrogênio em Transistores IGZO para Melhoria de PBTI por Recozimento em Atmosfera de Baixa Temperatura
title_auth Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing
title_es_txt Evolución dinámica del hidrógeno en transistores IGZO para mejora de PBTI mediante recocido en atmósfera a baja temperatura
title_fr_txt Évolution dynamique de l'hydrogène dans les transistors IGZO pour l'amélioration du PBTI par recuit à basse température sous atmosphère
title_full Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing
title_fullStr Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing
title_full_unstemmed Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing
title_pt_txt Evolução Dinâmica do Hidrogênio em Transistores IGZO para Melhoria de PBTI por Recozimento em Atmosfera de Baixa Temperatura
title_short Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing
title_sort dynamic evolution of hydrogen in igzo transistors for pbti improvement by low-temperature atmosphere annealing
topic Electronics
General
Electronics
url http://ieeexplore.ieee.org/document/11293760