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Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity
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| Published in: | IEEE Journal of the Electron Devices Society |
|---|---|
| Format: | Online Article RSS Article |
| Published: |
2026
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| Subjects: | |
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| _version_ | 1868553326224736256 |
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| collection | WordPress RSS FRELIP Feed Integration |
| container_title | IEEE Journal of the Electron Devices Society |
| description | |
| discipline_display | Electronics |
| discipline_facet | Electronics |
| format | Online Article RSS Article |
| genre | Journal Article |
| id | rss_article:74179 |
| institution | FRELIP |
| journal_source_facet | IEEE Journal of the Electron Devices Society |
| last_indexed | 2026-06-20T21:35:10.452Z |
| publishDate | 2026 |
| publishDateSort | 2026 |
| record_format | rss_article |
| spellingShingle | Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity Electronics General Electronics |
| sub_discipline_display | General |
| sub_discipline_facet | General |
| subject_display | Electronics General Electronics |
| subject_facet | Electronics General Electronics |
| title | Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity |
| title_alt | Estudio de simulación sobre la escalabilidad de transistores de efecto de campo reconfigurables de canal envolvente con polaridad controlada por puerta Étude de simulation sur l'évolutivité des transistors à effet de champ reconfigurables à canal tout autour avec polarité contrôlée par grille Estudo de simulação sobre a escalabilidade de transistores de efeito de campo reconfiguráveis com canal ao redor e polaridade controlada por porta |
| title_auth | Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity |
| title_es_txt | Estudio de simulación sobre la escalabilidad de transistores de efecto de campo reconfigurables de canal envolvente con polaridad controlada por puerta |
| title_fr_txt | Étude de simulation sur l'évolutivité des transistors à effet de champ reconfigurables à canal tout autour avec polarité contrôlée par grille |
| title_full | Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity |
| title_fullStr | Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity |
| title_full_unstemmed | Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity |
| title_pt_txt | Estudo de simulação sobre a escalabilidade de transistores de efeito de campo reconfiguráveis com canal ao redor e polaridade controlada por porta |
| title_short | Simulation Study on the Scalability of Channel-All-Around Reconfigurable Field-Effect Transistors With Gate-Controlled Polarity |
| title_sort | simulation study on the scalability of channel-all-around reconfigurable field-effect transistors with gate-controlled polarity |
| topic | Electronics General Electronics |
| url | http://ieeexplore.ieee.org/document/11367430 |