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Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory
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| Published in: | IEEE Journal of the Electron Devices Society |
|---|---|
| Format: | Online Article RSS Article |
| Published: |
2026
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| Subjects: | |
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| _version_ | 1868553326224736257 |
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| collection | WordPress RSS FRELIP Feed Integration |
| container_title | IEEE Journal of the Electron Devices Society |
| description | |
| discipline_display | Electronics |
| discipline_facet | Electronics |
| format | Online Article RSS Article |
| genre | Journal Article |
| id | rss_article:74180 |
| institution | FRELIP |
| journal_source_facet | IEEE Journal of the Electron Devices Society |
| last_indexed | 2026-06-20T21:35:10.452Z |
| publishDate | 2026 |
| publishDateSort | 2026 |
| record_format | rss_article |
| spellingShingle | Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory Electronics General Electronics |
| sub_discipline_display | General |
| sub_discipline_facet | General |
| subject_display | Electronics General Electronics |
| subject_facet | Electronics General Electronics |
| title | Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory |
| title_alt | Programación a nivel de pila de bajo consumo habilitada por voltaje optimizado de línea de palabra ficticia en memoria flash 3-D NAND Programmation au niveau de la pile à faible puissance activée par une tension de ligne de mot factice optimisée dans la mémoire flash 3D NAND Programação em nível de pilha de baixa potência habilitada por tensão otimizada de linha de palavra dummy em memória flash 3D NAND |
| title_auth | Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory |
| title_es_txt | Programación a nivel de pila de bajo consumo habilitada por voltaje optimizado de línea de palabra ficticia en memoria flash 3-D NAND |
| title_fr_txt | Programmation au niveau de la pile à faible puissance activée par une tension de ligne de mot factice optimisée dans la mémoire flash 3D NAND |
| title_full | Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory |
| title_fullStr | Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory |
| title_full_unstemmed | Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory |
| title_pt_txt | Programação em nível de pilha de baixa potência habilitada por tensão otimizada de linha de palavra dummy em memória flash 3D NAND |
| title_short | Low-Power Stack-Level Programming Enabled by Optimized Dummy Word Line Voltage in 3-D NAND Flash Memory |
| title_sort | low-power stack-level programming enabled by optimized dummy word line voltage in 3-d nand flash memory |
| topic | Electronics General Electronics |
| url | http://ieeexplore.ieee.org/document/11367431 |