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Analytical Switching Loss Model for GaN Gate Injection Transistors

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Bibliographic Details
Published in:IEEE Open Journal of Power Electronics
Format: Online Article RSS Article
Published: 2026
Subjects:
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container_title IEEE Open Journal of Power Electronics
description
discipline_display Energy
discipline_facet Energy
format Online Article
RSS Article
genre Journal Article
id rss_article:90985
institution FRELIP
journal_source_facet IEEE Open Journal of Power Electronics
last_indexed 2026-06-13T02:00:50.500Z
publishDate 2026
publishDateSort 2026
record_format rss_article
spellingShingle Analytical Switching Loss Model for GaN Gate Injection Transistors
Energy
General
Energy
sub_discipline_display General
sub_discipline_facet General
subject_display Energy
General
Energy
Energy
General
Energy
subject_facet Energy
General
Energy
title Analytical Switching Loss Model for GaN Gate Injection Transistors
title_auth Analytical Switching Loss Model for GaN Gate Injection Transistors
title_full Analytical Switching Loss Model for GaN Gate Injection Transistors
title_fullStr Analytical Switching Loss Model for GaN Gate Injection Transistors
title_full_unstemmed Analytical Switching Loss Model for GaN Gate Injection Transistors
title_short Analytical Switching Loss Model for GaN Gate Injection Transistors
title_sort analytical switching loss model for gan gate injection transistors
topic Energy
General
Energy
url http://ieeexplore.ieee.org/document/11494270