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Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies”
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| Published in: | IEEE Journal of the Electron Devices Society |
|---|---|
| Format: | Online Article RSS Article |
| Published: |
2026
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| Subjects: | |
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| _version_ | 1868847811662970881 |
|---|---|
| collection | WordPress RSS FRELIP Feed Integration |
| container_title | IEEE Journal of the Electron Devices Society |
| description | |
| discipline_display | Electronics |
| discipline_facet | Electronics |
| format | Online Article RSS Article |
| genre | Journal Article |
| id | rss_article:95164 |
| institution | FRELIP |
| journal_source_facet | IEEE Journal of the Electron Devices Society |
| last_indexed | 2026-06-24T03:35:58.774Z |
| publishDate | 2026 |
| publishDateSort | 2026 |
| record_format | rss_article |
| spellingShingle | Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies” Electronics General Electronics |
| sub_discipline_display | General |
| sub_discipline_facet | General |
| subject_display | Electronics General Electronics |
| subject_facet | Electronics General Electronics |
| title | Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies” |
| title_alt | Fe de erratas a “Estudio experimental y de simulación integral de seis topologías de diseño de MOSFET SiC de 1.2 kV” Erratum à « Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies » Errata para “Estudo Experimental e de Simulação Abrangente de Seis Topologias de Layout de MOSFET SiC de 1,2 kV” |
| title_auth | Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies” |
| title_es_txt | Fe de erratas a “Estudio experimental y de simulación integral de seis topologías de diseño de MOSFET SiC de 1.2 kV” |
| title_fr_txt | Erratum à « Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies » |
| title_full | Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies” |
| title_fullStr | Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies” |
| title_full_unstemmed | Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies” |
| title_pt_txt | Errata para “Estudo Experimental e de Simulação Abrangente de Seis Topologias de Layout de MOSFET SiC de 1,2 kV” |
| title_short | Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies” |
| title_sort | erratum to “comprehensive experimental and simulation study of six 1.2kv sic mosfet layout topologies” |
| topic | Electronics General Electronics |
| url | http://ieeexplore.ieee.org/document/11437564 |