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Fabrication and characterization of Pb-Ge-Te nanocrystals and thin films as a potential material for ferroelectric applications
Recent trends of technology require reliable memory devices in terms of large capacity, bandwidth, and high performance along with low power consumption and cost to be compatible with scaling computing systems size. Currently, charge based memories such as dynamic random access memory (DRAM) face so...
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AUC Knowledge Fountain
2019
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