Full Text Available
Note: Clicking the button above will open the full text document at the original institutional repository in a new window.
The downscaling of MOSFET devices leads to well-studied short channel effects and more complex quantum mechanical effects. Both quantum and short channel effects not only alter the performance but they also affect the reliability. This continued scaling of the MOS device gate length puts a demand on...
| Main Author: | |
|---|---|
| Format: | Thesis |
| Published: |
AUC Knowledge Fountain
2018
|
| Subjects: | |
| Tags: |
No Tags, Be the first to tag this record!
|